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Analog & Power
BCD (Bipolar-CMOS-DMOS) Technology

SMIC offers an industry-leading BCD power management platform from 0.35μm to 65nm with customizable CMOS density and a combination of bipolar NPN and PNP devices, as well as high voltage LDMOS.

Offerings:
  • 65nm1.2V/2.5V/5V
  • 0.18μm Epi 1.8V/5V/10V/12V/20V/35V/40V
  • 0.35μm Bulk 3.3V/5V/15V/18V/24V/30V/40V
Features:
  • Core device is compatible with logic process flow, I/O & LDMOS share Gate OX
  • SMIC has more than 7 years of experience with BCD: over one million wafers manufactured with average yield >95%
Next Generation:
  • 15μm Bulk 1.8V/5V/12-60V
  • 0.18μm HV-BCD 5V/40V CMOS LDMOS~60V
IGBT (Insulated Gate Bipolar Transistor) Technology

SMIC set up IGBT platform since 2014. IGBT platform will provide 600V and 1200V high voltage IGBT device. And provide Reverse Conduction Integrated (RC-IGBT) (optional)

Features:
  • BEOL is compatible with logic process flow, Low VCEsat, low carrier storage and low switch loss.



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