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Mature logic - 90nm, 0.13/0.11µm, 0.18µm, 0.25µm, 0.35µm
90nm SMIC has multiple 90nm products in mass production at our 300mm facilities. With in-depth experience in process development, SMIC has made 90nm a vital technology node available to our customers worldwide. Our 90nm process technology uses copper interconnect, low-k material to produce high-performance devices. SMIC's 90nm production at our state-of-the-art 300mm facilities ensures cost optimization, providing our customers with additional resources for further technology enhancements. This 90nm technology fulfills the ever-stringent requirements of power, performance, and integration for applications such as wireless handsets, digital TVs, set-top-boxes, mobile TVs, PMPs, wireless LANs and PC chipsets. Furthermore, this technology can be customized to accommodate various design requirements including high speed, low power, mixed signal, RF, and to provide embedded/SOI solutions.

At 90nm, SMIC provides design for manufacturing (DFM) solutions for performance enhancement and yield improvements including reliability assurance. Additionally, 90nm libraries, IP, and I/Os are available through SMIC's network of library partners.

Features:

  • Core device voltage from 1.0V to 1.2V
  • Multiple threshold voltage (Vt) for MOS devices
  • I/O device options: 1.8V, 2.5V or 3.3V
  • Single poly, nine-metal-layer (1P9M), Copper with low-k (3.0) dielectric process
  • Mixed signal/RF options: deep N-well, multiple-Vt MOSFET, high-resistance poly, MIM capacitor, thick metal inductor, varactor, RFCMOS
 
 
90nm Logic Standard Offerings
Standard Offering 90LL (1.2V) 90G (1.0V)
Core Device HVt
SVt
LVt
I/O Device 1.8V
2.5V
2.5V OD 3.3V
3.3V
Memory SP SRAM (0.999μm2)
DP SRAM (1.994μm2)
 
 
0.13μm/0.11μmCompared to the same device on SMIC's 0.15μm technology, our 0.13μm technology enables a substantial die size reduction of more than 25% and performance enhancement by as much as 30%. The die size can be reduced by more than 50% and chip performance increased by more than 50% when compared to our 0.18μm technology.

SMIC's 0.13μm process technology uses an all-copper interconnect approach to drive high-performance devices while enabling cost optimization. Using eight metal layers with a poly gate length of down to 0.08μm, our 0.13μm technology offers generic devices with a core voltage of 1.2V and I/Os with supply voltage of 2.5V or 3.3V options. Low-voltage and low-leakage options are in mass production.

0.13μm libraries, memory compilers, I/O and analog IP are available through our network of library partners.

Features

  • I/O device options: 2.5V or 3.3V
  • Single poly, eight-metal-layer (1P8M), Cu with FSG process
  • Mixed signal options: deep N-well, multiple-Vt MOSFET, high-resistance poly, MiM capacitor, thick metal inductor
 
 
0.13μm Logic Standard Offerings
Standard Offering 0.13μmLL (1.5V) 0.13μmG (1.2V)
Core Device HVt  
SVt
LVt  
I/O Device 2.5V  
3.3V
Memory (Pre-Shrink)
SP SRAM (2.43μm2)
SP SRAM (2.14μm2)
SP SRAM (2.03μm2)  
 
 
0.11μm Logic Standard Offerings
Standard Offering 0.11μmLL (1.2V) 0.11μmG (1.2V)
Core Device HVt  
SVt  
LVt  
I/O Device 2.5V  
3.3V  
Memory (Pre-Shrink) SP SRAM (2.43μm2)  
SP SRAM (2.14μm2)    
SP SRAM (2.03μm2)  
 
0.18μmOptimized for speed, power, density and cost, SMIC's 0.18μm process technology has been proven for a broad range of consumer, communications and computing applications. It also offers customers flexible solutions with modules for embedded memory, mixed signal or RF CMOS.

Using a single poly, up to six-metal-layers process, this technology features multiple voltages of 1.8V, 3.3V and 5V, and a high gate density of over 100,000 gates per mm2.

SMIC provides cost-effective and proven solutions at the 0.18μm node for smart cards, consumer electronics and various other applications. Our 0.18μm process technology family includes logic, mixed signal/RF, high-voltage, BCD, EEPROM and OTP technologies. These are supported by an extensive range of libraries and IP.

Features:

  • Core device options: Generic (G)
  • I/O device options: 3.3V or 5V
  • 1 poly, up to 6 metals (Al)
  • Single poly, six-metal-layer (aluminum) process Mixed signal options: deep N-well, multiple-Vt MOSFET, high-resistance poly, MiM capacitor, thick metal inductor
 
 
0.25μm

SMIC's 0.25μm technology enables high-performance, low-power integrated circuits (ICs) for high-performance graphics, microprocessors, communications and computer data processing applications. Logic as well as mixed signal/RF CMOS (for 3.3V and 5V applications) are offered.

Features:
  • Supports 2.5V, 3.3V or 5V I/O devices
  • Single poly, five-metal-layer (aluminum) process
  • Shallow trench isolation
  • Mixed signal options: deep N-well, multiple-Vt MOSFET, high resistance poly, MiM capacitor, thick metal inductor
 
 
0.35μm SMIC provides cost-effective and proven solutions at the 0.35μm node for smart cards and consumer electronics and various other applications. Our 0.35μm process technology family includes logic, mixed signal/RF, high-voltage, BCD, EEPROM and OTP technologies. These are supported by an extensive range of libraries and IP.



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