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• Advanced Logic
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• 90nm, 0.13/0.11µm, 0.15µm,   0.18µm, 0.25µm, 0.35µm
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• IGBT
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Insulated Gate Bipolar Transistor (IGBT)
Since 2015 SMIC has had an IGBT platform with focus on the latest generation of Trench +FS (Field Stop) IGBT structure. We have provided a whole set of advanced backside IGBT processes, which included Taiko wafer thinning process; wet etch; ion implant; laser anneal and backside metal process. Currently the development of Deep trench +thin wafer + Field Stop process has finished, and we can provide 600V~1200V device processes, this performance is consistent with other leading foundries.
Features:

  • Advanced IGBT structure (Trench +FS)
  • Integrated backside IGBT process
  • Excellent device performance